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High-frequency distortion analysis of analog integrated circuits

机译:模拟集成电路的高频失真分析

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An approach is presented for the analysis of the nonlinearnbehavior of analog integrated circuits. The approach is based on anvariant of the Volterra series approach for frequency domain analysis ofnweakly nonlinear circuits with one input port, such as amplifiers, andnwith more than one input port, such as analog mixers and multipliers. Byncoupling numerical results with symbolic results, both obtained withnthis method, insight into the nonlinear operation of analog integratedncircuits can be gained. For accurate distortion computations, thenaccuracy of the transistor models is critical. A MOS transistor model isndiscussed that allows us to explain the measured fourth-order nonlinearnbehavior of a 1 GHz CMOS upconverter. Further, the method is illustratednwith several examples, including the analysis of an operationalnamplifier up to its gain-bandwidth product. This example has also beennverified experimentally
机译:提出了一种分析模拟集成电路非线性行为的方法。该方法基于Volterra级数方法的变体,用于具有一个输入端口(例如放大器)和不具有一个以上输入端口(例如模拟混频器和乘法器)的弱非线性电路的频域分析。通过将数值结果与符号结果相结合,两者都可以通过这种方法获得,从而可以深入了解模拟集成电路的非线性操作。对于精确的失真计算,晶体管模型的准确性至关重要。讨论了MOS晶体管模型,该模型使我们能够解释1 GHz CMOS上变频器的实测四阶非线性行为。此外,通过几个示例来说明该方法,包括分析运算放大器直至其增益带宽乘积。此示例也已通过实验验证

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