Surface States and Surface Umklapp Transitions in Angle-resolved Photoemission from a GaAs(111)-2 x 2 Surface

摘要

Studies of angle-resolved photoemission from an As-rich GaAs(111)-2 x 2 surface have been extended to off-normal emission. The experimentally observed peak dispersion was compared with calculation and to previously reported photoemission results. This enabled us to identify emission features due mainly to surface states and features to which a combination of various transitions, including surface umklapp, may contribute.