Valence band offset and interface formation of Ge/ZnSe(100) studied by synchrotron radiation photoemission

摘要

The formation and band lineup of the Ge/ZnSe(100) interface have been studied by synchrotron radiation photoemission spectroscopy. Core level intensity measurements from the ZnSe substrate as well as from the Ge overlayer show a two-dimensional deposition of Ge film. Core level spectra indicate that Ge atoms react with Se atoms slightly at the interface. We derive a valence band offset of 1.76 ± 0.1eV for Ge/ZnSe(100).