Structural and electronic properties of As:Ge_n on Si(001) surface

摘要

The structural and electronic properties of As:Ge_n on Si(001) semi-infinite surface (with n=0～9) have been analyzed by a self-consistent semi-empirical approach based on the Chadi's total energy model and the charge neutrality condition. The geometry of semi-infinite systems has been treated by the scattering theory method. The geometric and electronic structures are presented and discussed.