Band-dispersion-originated photoelectron intensity oscillations during Si epitaxial growth on Si(100)

摘要

The photoelectron intensities from the surface states on Si(100) periodically oscillate during Si growth and that oscillation is associated with the alternation between the 2 x 1 and the 1 x 2 surface reconstructions [Y.Enta et al., Surf. Sci. 313(1994)L797]. For clarifying the origin of the oscillation in more detail, angle-resolved-ultraviolet-photoelectron-spectroscopy measurements for both Si(100)2 x 1 and 1 x 2 clean surfaces have been performed. As a result, it was found that the photoelectron intensity oscillations on Si(100) arise from the difference in the surface band dispersions between the 2 x 1 and the 1 x 2 clean surfaces.