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Some aspects of the design study on a fourth-generation-like VUV/SXR light source

机译:类似第四代VUV / SXR光源的设计研究的某些方面

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Some aspects of the design study on a fourth-generation-like vacuum ultraviolet/soft X-ray (VUV/SXR) light source are summarized. A storage ring lattice adopting a seven-bend achromat (SBA) structure is presented. High brightness and coherence of SR light are emphasized. The natural electron beam emittance reaches as low as 0.25 nm.rad at 2 GeV. The ring circumference is 473.68 m. Eight 7-m long and four 18-m long dispersion-free straights are available for installation of insertion devices (IDs) and other kinds of equipment. Sources based on long undulators placed in long straights would be able to provide SR spectra with a photon beam brightness up to 10~(21) photons/s/mrad~2/mm~2/0.1%BW. The Touschek lifetime, which is reputed as one of the most crucial issues for design of such low energy (2-4 GeV), low emittance (in the 10~(-10) m.rad range) light sources, has been studied by taking into account the bunch lengthening and intra-beam scattering effects. We find that at lower energies (around 2 GeV) both the bunch length and momentum spread increase by a factor of 2.7 due to the longitudinal microwave instability, and the emittance blows up by factors of 2.7-4.4, corresponding to coupling ratios of 10%-1%, caused by the intra-beam scattering; however, at the higher energies (around 4 GeV), there are no remarkable changes for these parameters (an average bunch current of 1 mA is assumed throughout the calculation). Thus, the energy dependence of the Touschek lifetime is modified correspondingly, and the Touschek lifetime issue becomes less serious at the cost of the bunch lengthening and widening and the emittance blowup at the low energy range.
机译:总结了第四代真空紫外/软X射线(VUV / SXR)光源的设计研究的某些方面。提出了一种采用七弯消色差结构的存储环晶格。强调了SR光的高亮度和相干性。在2 GeV下,自然电子束发射率低至0.25 nm.rad。环周长为473.68 m。 8个7米长和4个18米长的无色散布线可用于安装插入设备(ID)和其他类型的设备。基于放置在长直线上的长波状起伏器的光源将能够提供光子束亮度高达10〜(21)光子/s/mrad~2/mm~2/0.1%BW的SR光谱。 Touschek的寿命被认为是设计这种低能量(2-4 GeV),低发射率(在10〜(-10)m.rad范围内)光源的最关键问题之一,考虑到束的加长和束内散射效应。我们发现,在较低的能量(大约2 GeV)下,由于纵向微波的不稳定性,束长度和动量扩展都增加了2.7倍,并且发射率增加了2.7-4.4倍,对应的耦合比为10% -1%,由光束内散射引起;但是,在较高的能量(约4 GeV)下,这些参数没有明显变化(在整个计算中假设平均束电流为1 mA)。因此,对Touschek寿命的能量依赖性进行了相应的修改,并且在低能量范围内,以束增长和变宽以及发射爆炸的代价,Touschek寿命问题变得不太严重。

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  • 作者

    L. Chen;

  • 作者单位

    SPring-8, Kamigori, Ako-gun, Hyogo 678-12, Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 光学;
  • 关键词

  • 入库时间 2022-08-18 01:03:19

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