机译:通过嵌入石墨烯内插层合成外延纳米薄PT_5GD合金的新方法
St Petersburg State Univ St Petersburg 198504 Russia;
St Petersburg State Univ St Petersburg 198504 Russia;
St Petersburg State Univ St Petersburg 198504 Russia|Russian Acad Sci Ural Branch Inst Solid State Chem Ekaterinburg 620990 Russia;
St Petersburg State Univ St Petersburg 198504 Russia;
St Petersburg State Univ St Petersburg 198504 Russia;
St Petersburg State Univ St Petersburg 198504 Russia;
St Petersburg State Univ St Petersburg 198504 Russia;
St Petersburg State Univ St Petersburg 198504 Russia;
St Petersburg State Univ St Petersburg 198504 Russia;
St Petersburg State Univ St Petersburg 198504 Russia|Elektronenspeicherring BESSY II Helmholtz Zentrum Berlin Mat & Energie Albert Einstein Str 15 D-12489 Berlin Germany;
Elektronenspeicherring BESSY II Helmholtz Zentrum Berlin Mat & Energie Albert Einstein Str 15 D-12489 Berlin Germany;
Elettra Sincrotrone Trieste BaDElPh Beamline Str Statale 14 Km 163-5 I-34149 Trieste Italy;
Elettra Sincrotrone Trieste BaDElPh Beamline Str Statale 14 Km 163-5 I-34149 Trieste Italy;
Hiroshima Univ Hiroshima Synchrotron Radiat Ctr 2-313 Kagamiyama Higashihiroshima 7390046 Japan;
Hiroshima Univ Hiroshima Synchrotron Radiat Ctr 2-313 Kagamiyama Higashihiroshima 7390046 Japan;
Hiroshima Univ Grad Sch Sci 1-3-1 Kagamiyama Higashihiroshima 7398526 Japan;
St Petersburg State Univ St Petersburg 198504 Russia;
Graphene; 2D catalyst; Electronics; Epitaxial alloy; Angle-resolved photoemission spectroscopy; Scanning tunneling microscopy; Ab initio calculations;
机译:6H-SiC(0001)下外延石墨烯下钴嵌入的研究
机译:在金属衬底上外延生长的石墨烯下超高真空条件下CO分子的嵌入
机译:通过外延石墨烯的插入半导体银单层的大面积合成
机译:载流子迁移率作为4H-SiC上生长和H嵌入的外延图形的温度的函数
机译:碳化硅上原始,插层和功能化外延石墨烯的同步X射线研究(0001)。
机译:从后面生长:二维FeO莫尔结构的插层生长在金属支撑的石墨烯下
机译:通过外延石墨烯的插入半导体银单层的大面积合成