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In-situ synthesis of Bi_2S_3 quantum dots for enhancing photodegradation of organic pollutants

机译:Bi_2S_3量子点的原位合成可增强有机污染物的光降解

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摘要

Bismuth-based semiconductor materials have been considered as potential and green technology to alleviate various organic pollutants in recent years. In this work, we modified the Bi4NbO8Cl semiconductor via developing hetero-structure to overcome the shortcoming of fast recombination of electrons and holes. Bi2S3 quantum dots with Bi4NbO8Cl were successfully in-situ synthesized by the hydrothermal method, which were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and UV-vis diffuse reflectance spectroscopy. The Bi2S3/Bi4NbO8Cl hetero-structure with broad light absorption region and low recombination efficiency was employed to photodegrade the organic pollutants (rhodamine B, Rh-B) under visible-light irradiation. It exhibited an enhanced photocatalytic degradation of Rh-B compared to Bi4NbO8Cl and Bi2S3, due to the in-situ synthesized Bi2S3 quantum dots that could effectively separate the photo-induced electron-hole pairs and suppress their recombination. Besides, the DFT data further explained the interfacial properties of Bi2S3/Bi4NbO8Cl. Thus, this work provides a unique idea in the design of novel photocatalysts, thereby promoting their potential application in industry.
机译:近年来,基于铋的半导体材料被认为是缓解各种有机污染物的潜在和绿色技术。在这项工作中,我们通过开发异质结构来修饰Bi4NbO8Cl半导体,以克服电子与空穴快速复合的缺点。通过水热法成功地原位合成了具有Bi4NbO8Cl的Bi2S3量子点,并通过X射线衍射(XRD),X射线光电子能谱(XPS),扫描电子显微镜(SEM),透射电子显微镜(TEM)对其进行了表征。 ,以及紫外可见漫反射光谱。采用Bi2S3 / Bi4NbO8Cl异质结构,具有较宽的光吸收区域和较低的复合效率,可以在可见光照射下光降解有机污染物(若丹明B,Rh-B)。与Bi4NbO8Cl和Bi2S3相比,它表现出增强的Rh-B光催化降解,这是由于原位合成的Bi2S3量子点可以有效地分离光致电子-空穴对并抑制其重组。此外,DFT数据进一步解释了Bi2S3 / Bi4NbO8Cl的界面性质。因此,这项工作为新型光催化剂的设计提供了独特的思路,从而促进了其在工业中的潜在应用。

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