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Preparation of TiO_2/single layer graphene composite films via a novel interface-facilitated route

机译:新型界面促进途径制备TiO_2 /单层石墨烯复合薄膜

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摘要

Titanium dioxide/single layer graphene (TiO2/SLG) composites have been widely studied due to the role of graphene acting as an electron-acceptor, which can suppress the recombination of photogenerated electron-hole pairs from TiO2 upon light irradiation. In this study, a novel route for the synthesis of TiO2/SLG composite films using controlled experiment chemical vapor deposition combined with magnetron sputtering is reported for the first time. The structure and morphology of the SLG and TiO2/SLG composites were characterized by scanning electron microscopy, Raman spectroscopy, transmission electron microscopy, X-ray diffraction and X-ray photoelectron spectroscopy. The results showed that the introduction of SLG layer influenced the crystalline structure, morphology and photocurrent of the TiO2 films. The interaction between TiO2 and SLG and p-doping of SLG were demonstrated by the G band splitting and upshift of the 2D band. With the higher quality of SLG as the interface of the TiO2/SLG, the composite films exhibited improved photocurrent and reached the highest of about 3.25 mu A/cm(-2). The results suggested the high separation efficiency of photogenerated electron-hole pairs, which could inspire continuous researches of energy conversion and environmental applications.
机译:二氧化钛/单层石墨烯(TiO2 / SLG)复合材料由于石墨烯作为电子受体的作用而得到了广泛的研究,石墨烯可以抑制光照射下TiO2产生的光生电子-空穴对的复合。在这项研究中,首次报道了使用受控实验化学气相沉积与磁控溅射相结合的方法合成TiO2 / SLG复合膜的新途径。通过扫描电子显微镜,拉曼光谱,透射电子显微镜,X射线衍射和X射线光电子能谱对SLG和TiO2 / SLG复合材料的结构和形貌进行了表征。结果表明,SLG层的引入影响了TiO2薄膜的晶体结构,形貌和光电流。 TiO2和SLG之间的相互作用以及SLG的p掺杂通过G波段分裂和2D波段上移得到了证明。以较高质量的SLG作为TiO2 / SLG的界面,复合膜显示出改善的光电流,最高达到约3.25μA/ cm(-2)。研究结果表明,光生电子-空穴对具有很高的分离效率,可以激发能量转换和环境应用的不断研究。

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