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首页> 外文期刊>Applied Surface Science >Preparation of CaS : Cu,F thin-film electroluminescent devices with an emission including purple region
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Preparation of CaS : Cu,F thin-film electroluminescent devices with an emission including purple region

机译:发射包括紫色区的CaS:Cu,F薄膜电致发光器件的制备

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CaS:Cu,F thin films have been prepared aiming at development of purple-blue emitting thin-film electroluminescent (TFEL) device with high luminance. The dependence of structural and photoluminescent (PL) properties of CaS:Cu,F thin films on annealing temperature and time was investigated. It was found that the annealing at higher than 800 degrees C was necessary. Moreover, improvement of crystallinity and PL properties of the films saturated for the annealing time longer than 10 min. It is concluded, therefore that the annealing at higher than 800 degrees C for about 10 min is desirable. CaS:Cu,F TFEL devices was fabricated on Si substrate. The purple-blue EL with an obvious peak at 425 mu was obtained from the device with 0.3 at.% of Cu for the first time. (c) 2004 Elsevier B.V. All rights reserved.
机译:制备CaS:Cu,F薄膜的目的是开发具有高亮度的发射紫蓝色的薄膜电致发光(TFEL)器件。研究了CaS:Cu,F薄膜的结构和光致发光(PL)特性对退火温度和时间的依赖性。发现必须在高于800℃的温度下进行退火。此外,退火时间超过10分钟时,饱和膜的结晶度和PL性能得到改善。因此得出结论,希望在高于800摄氏度的温度下退火约10分钟。在Si衬底上制造了CaS:Cu,F TFEL器件。首次从具有0.3 at。%Cu的器件中获得了一个在425 µu处具有明显峰的紫蓝色EL。 (c)2004 Elsevier B.V.保留所有权利。

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