首页> 外文期刊>Applied Surface Science >Magnetron sputter deposition of a 48-member cuprate superconductor library: Bi_2Sr_2Y_xCa_(1-x)Cu_2O_(8+δ) (0.51≤x≤ 1) linearly varying in steps of △x=0.01
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Magnetron sputter deposition of a 48-member cuprate superconductor library: Bi_2Sr_2Y_xCa_(1-x)Cu_2O_(8+δ) (0.51≤x≤ 1) linearly varying in steps of △x=0.01

机译:磁控溅射沉积48位铜酸盐超导体库:Bi_2Sr_2Y_xCa_(1-x)Cu_2O_(8 +δ)(0.51≤x≤1)以△x = 0.01的步长线性变化

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Using magnetron sputtering, a spatial composition spread approach was applied successfully to obtain 48-member libraries of the Bi_2Sr_2Y_xCa_(1-x)Cu_2O_(8+δ) (0.5≤x≤1) cuprate superconducting system. The libraries of each system were deposited onto (100) single crystal MgO, mounted on a water cooled rotating table, using two targets: the antiferromagnetic insulator Bi_2Sr_2YCu_2O_(8+δ) (P = 98 W rf) and the hole doped superconductor Bi_2Sr_2CaCu_2O_(8+δ) (P = 44 W dc). A low chamber pressure of 0.81 mTorr argon was used to reduce scattering by the process gas. To minimize oxygen resputtering a substrate bias of -20 V was used, as well as a process gas free of oxygen. A rapid thermal processor was used to post-anneal the amorphous deposited films. A step annealing regime was used, with a ramp rate of 5℃/s for heating and cooling, with a first plateau at 780℃ held for 200 s, and a second at 875℃ held for 480 s. X-ray diffraction reveals that the films develop crystalline order with the c-axis lattice parameter contracting linearly from 30.55 A (x = 0.5) to 30.24 A (x = 1.0) with increasing Y-content, consistent with bulk values. The crystallized films are polycrystalline, developing preferred orientation (c-axis parallel to the substrate) for thinner members of the library. There is a change of 0.01 in doping per library member which will enable further studies to densely map phase space.
机译:使用磁控溅射,成功地应用了空间组成扩散方法,获得了Bi_2Sr_2Y_xCa_(1-x)Cu_2O_(8 +δ)(0.5≤x≤1)铜酸盐超导体系的48个成员库。每个系统的库都沉积在(100)单晶MgO上,该MgO安装在水冷旋转台上,使用两个目标:反铁磁绝缘体Bi_2Sr_2YCu_2O_(8 +δ)(P = 98 W rf)和掺杂空穴的超导体Bi_2Sr_2CaCu_2O_( 8 +δ)(P = 44 W直流)。使用0.81 mTorr氩气的低腔室压力来减少工艺气体的散射。为了最大程度地减少氧气的溅射,使用了-20 V的基板偏压以及不含氧气的工艺气体。使用快速热处理机对非晶沉积膜进行后退火。使用逐步退火方式,以5℃/ s的升温速率进行加热和冷却,其中第一个平台温度在780℃保持200 s,第二个平台温度在875℃保持480 s。 X射线衍射表明,随着Y含量的增加,薄膜的c轴晶格参数从30.55 A(x = 0.5)线性收缩到30.24 A(x = 1.0)呈晶体顺序,与体积值一致。结晶的膜是多晶的,对于库的较薄成员,显示出较好的方向(平行于基板的c轴)。每个库成员的掺杂变化为0.01,这将使进一步的研究能够密集映射相空间。

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