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Self-assembly Of β-ga_2o_3 Nanobelts

机译:β-ga_2o_3纳米带的自组装

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Self-assembly of β-Ga_2O_3 (beta-gallium oxide) nanobelts with diameters of 50-100 nm and lengths of tens to hundreds of microns have been studied using X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and high-resolution transmission electron microscopy (HRTEM). Under appropriate conditions such as nanobelts concentration, controlled solvent evaporation, β-Ga_2O_3 nanobelts assemble into a fan-like structure on the substrate. A tendency of these nanobelts to align parallel to each other was also observed. The mechanism behind the formation of self-assembly of β-Ga_2O_3 nanobelts has been proposed on the basis of lateral capillary forces.
机译:使用X射线衍射(XRD),扫描电子显微镜(SEM),透射电子研究了直径为50-100 nm,长度为数十至数百微米的β-Ga_2O_3(β-氧化镓)纳米带的自组装。显微镜(TEM)和高分辨率透射电子显微镜(HRTEM)。在适当的条件下,例如纳米带浓缩,控制溶剂蒸发,β-Ga_2O_3纳米带在基板上组装成扇形结构。还观察到这些纳米带彼此平行排列的趋势。基于横向毛细力,提出了β-Ga_2O_3纳米带自组装形成的机理。

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