Afm And Electronic Transport Studies Of Swift Heavy Ion Irradiated Mn/p-si Bilayer Structure

摘要

Mn/p-Si structures have been realised by electron beam evaporation of manganese on etched and cleaned p-Si wafers. Bilayer structures have been irradiated by swift heavy ions (of 100 MeV Fe~(7+) having a fluence of 1 × 10~(13) ions/cm~2). The electronic transport features across the bilayer of the structure (i.e. I-V characteristics across the Mn/p-Si interface) show a significant increase of current (by two orders of magnitude) for the irradiated ones as compared to un-irradiated ones. I-V characteristics across the interface has also been recorded in presence of in-plane (i.e., along the plane of the interface) magnetic field which show a significant magnetic field sensitivity for the irradiated ones. The surface morphological studies from AFM show a granular structure with open face having micro-particles in it, prior to the irradiation and round shaped embedded granular structure after the irradiation. XRD data show the formation of manganese silicide (Mn_5Si_2). The results are understood in the realm of interfacial intermixing which is tailored by the swift heavy ion irradiation.