Influence Of Substrate Morphology On Pb Growth

摘要

The crystallographic structure and morphology of Pb layers in their early stage of growth on Si(335) surface are studied with Reflection High Electron Energy Diffraction (RHEED) and specific resistivity techniques. The vicinal Si(335), with different surface morphology controlled by the amount of predeposiled Au, was used as a substrate. Changes in the substrate morphology, from disordered step distribution through a perfectly ordered Si(335) to a hill-and-valley structure consisting of wide (111) terraces and high Miller index facets, cause switching between one- and two-dimensional growth of the Pb structures.