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Electrodeposition Of Cowp Filmv. Structural And Morphological Characterisations

机译:覆盖膜的电沉积。结构和形态特征

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CoWP films were electrochemically deposited on copper-coated silicon wafers from citrate electrolytes containing cobalt sulphate, sodium tungstate and sodium hypophosphite under various deposition conditions and characterisations of the films were carried out using various instrumental techniques. Composition analyses using XPS showed that the surfaces of the films contained large amounts of oxides and hydroxide of tungsten and cobalt, respectively. An AES depth-profile, however, revealed that the bulk of the films predominantly consisted of cobalt, tungsten and phosphorus. Microstructural analyses using XRD showed that, depending on the composition and/or deposition conditions, CoWP films could be amorphous, polycrystalline and crystalline with a strong preferred orientation. Amorphous films were obtained when deposited at higher applied potential and current density or the films contained high amount of phosphorus and/or tungsten, while films deposited by very low applied potential and current density were crystalline with a preferred orientation of [002] of hexagonal cobalt. SEM images showed that the films deposited from neutral or acidic baths at room temperature had typical spherical nodular structures, while the films deposited from basic solution or at elevated temperature had needle-like crystallites. The crystalline films were much rougher than the amorphous films.
机译:在不同的沉积条件下,用含有硫酸钴,钨酸钠和次磷酸钠的柠檬酸盐电解质将CoWP薄膜电化学沉积在覆铜硅晶片上,并使用各种仪器技术对薄膜进行了表征。使用XPS的成分分析表明,薄膜表面分别包含大量的钨和钴的氧化物和氢氧化物。然而,AES深度剖面显示,大部分薄膜主要由钴,钨和磷组成。使用XRD进行的微结构分析表明,取决于组成和/或沉积条件,CoWP膜可以是无定形,多晶和具有强烈优选取向的晶体。当以较高的施加电势和电流密度沉积时获得非晶膜,或者该膜包含大量的磷和/或钨,而以非常低的施加电势和电流密度沉积的膜为晶体,六方钴的取向优选为[002] 。 SEM图像显示,在室温下从中性或酸性浴中沉积的膜具有典型的球形结节结构,而在碱性溶液中或在高温下沉积的膜具有针状微晶。结晶膜比非晶膜粗糙得多。

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