Chemical Composition Of Zrc Thin Films Grown By Pulsed Laser Deposition

摘要

ZrC films were grown on (100) Si substrates by the pulsed laser deposition (PLD) technique using a KrF excimer laser working at 40 Hz. The nominal substrate temperature during depositions was set at 300 ℃ and the cooling rate was 5 ℃/min. X-ray diffraction investigations showed that films deposited under residual vacuum or under 2 × 10~(-3) Pa of CH_4 atmosphere were crystalline, exhibiting a (2 0 0)-axis texture, while those deposited under 2 × 10~(-2) Pa of CH_4 atmosphere were found to be equiaxed and with smaller grain size. The surface elemental composition of as-deposited films, analyzed by Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS), showed the usual high oxygen contamination of carbides. Once the topmost 2-4 nm region was removed, the oxygen concentration rapidly decreased, down to around 3-8% only in bulk. Simulations of the X-ray reflectivity (XRR) curves indicated a smooth surface morphology, with roughness values below 1 nm (rms) and films density values of around 6.30-6.45 g/cm~3, very close to the bulk density. The growth rate, estimated from thickness measurements by XRR was around 8.25 nm/min. Nanoindentation results showed for the best quality ZrC films a hardness of 27.6 GPa and a reduced modulus of 228 GPa.