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Growth research of Sn nanoparticles deposited on Si(001) substrate by solid phase epitaxy

机译:固相外延生长在Si(001)衬底上的Sn纳米颗粒的生长研究

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摘要

High density of Sn nanoparticles (NPs) had been obtained directly on Si(001) substrate by solid phase epitaxy. The dependence of the morphology and crystallinity of Sn NPs on Sn coverage, annealing temperature and annealing time was investigated by atomic force microscope (AFM) and X-ray diffraction (XRD). Uniform and densely packed (~10~(10) cm~(-2)) Sn NPs were obtained at low Sn coverage, low annealing temperature and short annealing time, respectively. The XRD results showed that, the formed Sn NPs were in the form of crystalline β-Sn, with a distinct orientation of Sn(110)//Si(001). The nucleation activation energy of Sn adatoms on Si(001) surface was estimated to be 0.41 ± 0.05 eV.
机译:通过固相外延直接在Si(001)衬底上获得了高密度的Sn纳米颗粒(NPs)。利用原子力显微镜(AFM)和X射线衍射仪(XRD)研究了锡纳米颗粒的形貌和结晶度对锡覆盖率,退火温度和退火时间的影响。在低锡覆盖率,低退火温度和短退火时间内分别获得均匀且致密的(〜10〜(10)cm〜(-2))Sn NPs。 XRD结果表明,所形成的Sn NP为β-Sn晶体,具有明显的Sn(110)// Si(001)取向。 Si(001)表面上的Sn原子的成核活化能估计为0.41±0.05 eV。

著录项

  • 来源
    《Applied Surface Science》 |2010年第21期|P.6427-6432|共6页
  • 作者单位

    Henan Key Laboratory of Photovoltaic Materials, Hertan University, Kaifeng 475004, PR China;

    rnHenan Key Laboratory of Photovoltaic Materials, Hertan University, Kaifeng 475004, PR China;

    rnHenan Key Laboratory of Photovoltaic Materials, Hertan University, Kaifeng 475004, PR China;

    rnHenan Key Laboratory of Photovoltaic Materials, Hertan University, Kaifeng 475004, PR China;

    rnHenan Key Laboratory of Photovoltaic Materials, Hertan University, Kaifeng 475004, PR China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Sn nanoparticles; solid phase epitaxy; atomic force microscope; X-ray diffraction;

    机译:锡纳米粒子;固相外延;原子力显微镜X射线衍射;
  • 入库时间 2022-08-18 03:07:33

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