H_2S-sensing properties of Pt-doped mesoporous indium oxide

摘要

Pt-doped mesoporous indium oxide (In_2O_3) has been successfully obtained by a simple and effective in situ nanocasting method. The resultant samples were characterized by XRD, FE-SEM, TEM, N_2 physisorp-tion, XPS and EDX. The gas sensing properties for hydrogen sulfide (H_2S) of the Pt-doped mesoporous In_2O_3 specimens were also examined. The results exhibit those In_2O_3 specimens possess much higher response to H_2S even at low concentration of 2 ppm and a lower optimum working temperature of 150 ℃. A possible mechanism was also provided to explain the improvement of the sensing properties.