CdS thin films growth by fast evaporation with substrate rotation

摘要

CdS thin films were grown by fast evaporation technique combined with substrate rotation. The source evaporation temperature was maintained at 600℃ and the substrate temperature at 350℃ with background pressure of 1.0 m Torr. The substrates were corning glass 2947 with dimension of 1 in. x 1 in. rotate at 500 rpm during the growth. In order to verify the quality of the CdS films, the samples were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and optical measurements. The films shown a flat uniformity thickness with growth rate of ~3.5 nm/s, the orientation was in the cubic-(111) and hexagonal-(0 02) plane in dependence of the growth time, grain size ~5 nm, roughness uniformity ~2.7 nm, transmittance in the visible region spectrum ~80%, energy band gap between 2.39 and 2.42 eV and short circuit photocurrent density (J_(SC)) losses in the CdS films of 4.7mA/cm~2.