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Nanoembossing and piezoelectricity of ferroelectric Pb(Zr_(0.3),Ti_(0.7))O_3 nanowire arrays

机译:铁电Pb(Zr_(0.3),Ti_(0.7))O_3纳米线阵列的纳米压纹和压电性

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摘要

Arrays of ferroelectric PZT nanowires with lateral size down to 200 nm were fabricated by nanoembossing technology. Structural characterization of the embossed PZT film was studied by Raman spectroscopy. Multidomain configurations of a single nanowire have been explored by vertical mode piezoresponse force microscopy (VPFM). The local electric polarization of the individual ferroelectric nanowire has also been investigated. Excellent ferroelectric and piezoelectric characteristics observed in the embossed PZT nanowires suggest nanoembossing technique proposed in this work is promising to become a useful method for ferroelectric nanowires fabrication.
机译:通过纳米压印技术制造了横向尺寸低至200 nm的铁电PZT纳米线阵列。通过拉曼光谱研究了压纹PZT膜的结构表征。垂直模式压电响应力显微镜(VPFM)已探索了单个纳米线的多域构型。还研究了单个铁电纳米线的局部极化。在压纹PZT纳米线中观察到的优异的铁电和压电特性表明,这项工作中提出的纳米压纹技术有望成为制造铁电纳米线的有用方法。

著录项

  • 来源
    《Applied Surface Science》 |2011年第21期|p.8820-8823|共4页
  • 作者单位

    ASIC & System State Key Laboratory, Department of Microelectronics, Fudan University, Shanghai 200433, China;

    ASIC & System State Key Laboratory, Department of Microelectronics, Fudan University, Shanghai 200433, China;

    ASIC & System State Key Laboratory, Department of Microelectronics, Fudan University, Shanghai 200433, China;

    ASIC & System State Key Laboratory, Department of Microelectronics, Fudan University, Shanghai 200433, China;

    Rutherford Appleton Laboratory, Chilian, Didcot, Oxfordshire 0X00 0QX, UK;

    ASIC & System State Key Laboratory, Department of Microelectronics, Fudan University, Shanghai 200433, China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    nanoembossing; ferroelectric pzt nanowire; piezoelectric; domain;

    机译:纳米压花;铁电pzt纳米线;压电;畴;
  • 入库时间 2022-08-18 03:07:07

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