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Simplified method to prepare atomically-ordered TiO_2(110)-(l × 1) surfaces with steps and terraces

机译:制备带台阶和台阶的原子序TiO_2(110)-(l×1)表面的简化方法

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摘要

An effective way to prepare atomically-ordered rutile TiO_2(110) surfaces that have distinct step and terrace structures suitable for oxide thin film deposition is demonstrated. Only a two-step procedure, consisting of 20% HF etching and UHV-annealing at 1100℃, was required to yield a clean (1×1) structure with step and terrace structures. Investigation of the surface using scanning tunneling microscopy, low-energy electron diffraction, and Auger electron spectroscopy reveals that carbon contamination is removed at around 800℃, and straight steps with clear terraces appear at around 1000℃.
机译:演示了一种有效的方法来制备原子序的金红石型TiO_2(110)表面,该表面具有适用于氧化物薄膜沉积的独特的台阶和台阶结构。只需两步程序,即20%的HF蚀刻和1100℃的UHV退火,即可产生具有阶梯和平台结构的干净(1×1)结构。使用扫描隧道显微镜,低能电子衍射和俄歇电子能谱对表面进行调查后发现,碳污染在800℃左右被清除,在1000℃左右出现了带有清晰阶梯的直线台阶。

著录项

  • 来源
    《Applied Surface Science》 |2011年第11期|p.4867-4869|共3页
  • 作者单位

    WPI-Advanced Institute for Materials Research. Tohoku University, Sendai 980-8577, Japan,Department of Chemistry, The University of Tokyo, Bunkyo, Tokyo 113-0033, Japan;

    WPI-Advanced Institute for Materials Research. Tohoku University, Sendai 980-8577, Japan;

    WPI-Advanced Institute for Materials Research. Tohoku University, Sendai 980-8577, Japan;

    Department of Chemistry, The University of Tokyo, Bunkyo, Tokyo 113-0033, Japan;

    WPI-Advanced Institute for Materials Research. Tohoku University, Sendai 980-8577, Japan,Advanced Research Laboratory, Hitachi, Ltd., Saitama 350-0395, Japan,Department of Physics, Tokyo Institute of Technology, Meguro, Tokyo 152-8551,Japan;

    WPI-Advanced Institute for Materials Research. Tohoku University, Sendai 980-8577, Japan;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Oxide electronics; Surface science; Scanning probe microscopy; TiO_2(110);

    机译:氧化物电子学;表面科学;扫描探针显微镜;TiO_2(110);
  • 入库时间 2022-08-18 03:07:03

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