机译:脉冲偏压对等离子体增强化学气相沉积法制备的硅/氮结合类金刚石碳膜结构和性能的影响
Graduate School of Science and Technology, Hirosaki University, Hirosaki, Aomori 036-8561, Japan;
Graduate School of Science and Technology, Hirosaki University, Hirosaki, Aomori 036-8561, Japan;
Graduate School of Science and Technology, Hirosaki University, Hirosaki, Aomori 036-8561, Japan;
Graduate School of Science and Technology, Hirosaki University, Hirosaki, Aomori 036-8561, Japan;
Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan;
Department of Electronics and Intelligent System, Tohoku Institute of Technology, Sendai 982-8577, Japan;
diamond-like carbon; chemical vapor deposition; silicon; nitrogen;
机译:原料气对等离子体增强化学气相沉积法制备的硅/氮结合类金刚石碳膜性能的影响
机译:衬底偏压对甲烷和氩气等离子增强化学气相沉积法制备的类金刚石碳膜的结构,力学和摩擦学性能的影响
机译:氢对等离子体增强化学气相沉积法制备的硅/氮结合金刚石类碳膜性能的影响
机译:6.2:通过使用等离子体化学气相沉积沉积的无氢类金刚石碳膜来增强场发射特性
机译:通过等离子体辅助化学气相沉积制备的类金刚石碳膜的热降解和摩擦学行为。
机译:前驱体C2H2分数对磁控溅射沉积制备的含Si和Ag的非晶碳复合膜的组织和性能的影响
机译:离子轰击能量通量对自由基注入等离子体增强化学气相沉积生长的化学成分对化学成分的影响和氢化非晶碳膜的结构
机译:衬底对金属有机化学气相沉积制备的外延pbTiO(sub 3)薄膜的结构和光学性质的影响