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首页> 外文期刊>Applied Surface Science >Study on the introduction of Se into CdS thin films: Influence on the kinetics of the deposition and the structural and optical properties
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Study on the introduction of Se into CdS thin films: Influence on the kinetics of the deposition and the structural and optical properties

机译:将硒引入CdS薄膜中的研究:对沉积动力学以及结构和光学性质的影响

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CdS and CdS0.75Se0.25 thin films were prepared at different deposition times (5-180 min) and at 75 C by chemical solution deposition. All the films are polycrystalline in nature; in the case of CdS, a mixture of cubic and hexagonal phase is present whereas the CdS0.75Se0.25 films show hexagonal phase. The CdS films are dense and homogeneous with good crystalline quality and band gap (E-g) values close to that of bulk material (2.48-2.52 eV). The properties of CdS0.75Se0.25 films are mainly affected by the deposition time. The growth is slow and disordered, the crystalline quality is low, and the increase of the strain is perceivable. The Eg changes from 2.41 to 2.25 eV. Room photoluminescence has been observed in both materials. The kinetics of the growth and the consumption rate of Cd, have a similar behavior for both systems presenting a two-regime process, however, the growth rate decreases when the Se is incorporated to the chemical solution. (C) 2015 Published by Elsevier B.V.
机译:通过化学溶液沉积在不同的沉积时间(5-180分钟)和75°C下制备CdS和CdS0.75Se0.25薄膜。所有的薄膜本质上都是多晶的。在CdS的情况下,存在立方相和六方相的混合物,而CdS0.75Se0.25薄膜显示六方相。 CdS膜致密且均匀,具有良好的结晶质量,带隙(E-g)值接近散装材料(2.48-2.52 eV)。 CdS0.75Se0.25薄膜的性能主要受沉积时间的影响。生长缓慢且无序,晶体质量低,并且可知应变的增加。 Eg从2.41变为2.25 eV。在两种材料中均观察到室内光致发光。 Cd的生长动力学和Cd的消耗速率对于两个系统都表现出两种状态的过程都具有相似的行为,但是,当将Se掺入化学溶液中时,生长速率会降低。 (C)2015由Elsevier B.V.发布

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