首页> 外文期刊>Applied Surface Science >Synthesis and electrochemical properties of Ti-doped DLC films by a hybrid PVD/PECVD process
【24h】

Synthesis and electrochemical properties of Ti-doped DLC films by a hybrid PVD/PECVD process

机译:混合PVD / PECVD工艺制备掺钛DLC薄膜及其电化学性能

获取原文
获取原文并翻译 | 示例
获取外文期刊封面目录资料

摘要

Low electrical conductivity and poor adhesion to metallic substrates are the main drawbacks of diamond-like carbon (DLC) films when used in electrode applications. In this study, Ti-doped DLC films with various Ti contents were synthesized on metal Ti substrates by a hybrid PVD/PECVD process, where PECVD was used for deposition of DLC films and PVD was used for Ti doping. The effects of the Ti doping ratio on the microstructure, adhesion strength, and electrical and electrochemical properties of the DLC films were systematically investigated. An increase in the Ti content led to increased surface roughness and a higher sp(2) /sp(3) ratio of the Ti-DLC films. Ti atoms existed as amorphous-phase Ti carbide when the Ti doping ratio was less than 2.8 at.%, while the nanocrystalline TiC phase was formed in DLC films when the Ti doping ratio was exceeded 4.0 at.%. The adhesion strength, electrical resistivity, electrochemical activity and reversibility of the DLC films were greatly improved by Ti doping. The influence of Ti doping ratio on the electrical and electrochemical properties of the DLC films were also investigated and the best performance was obtained at a Ti content of 2.8 at.%. (C) 2017 Elsevier B.V. All rights reserved.
机译:当用于电极应用时,类金刚石碳(DLC)膜的主要缺点是导电率低和对金属基材的附着力差。在这项研究中,通过混合PVD / PECVD工艺在金属Ti基板上合成了具有各种Ti含量的Ti掺杂DLC膜,其中PECVD用于沉积DLC膜,PVD用于Ti掺杂。系统地研究了Ti掺杂比对DLC薄膜的微观结构,粘附强度以及电学和电化学性能的影响。 Ti含量的增加导致Ti-DLC膜的表面粗糙度增加和sp(2)/ sp(3)比率更高。当Ti掺杂率小于2.8at。%时,Ti原子以非晶态Ti碳化物的形式存在,而当Ti掺杂率超过4.0at。%时,DLC膜中形成纳米晶TiC相。 Ti掺杂大大改善了DLC膜的粘合强度,电阻率,电化学活性和可逆性。还研究了Ti掺杂比例对DLC膜的电学和电化学性能的影响,并且当Ti含量为2.8at。%时获得了最佳性能。 (C)2017 Elsevier B.V.保留所有权利。

著录项

  • 来源
    《Applied Surface Science》 |2018年第1期|1184-1191|共8页
  • 作者单位

    Pusan Natl Univ, Sch Mat Sci & Engn, Busan 609735, South Korea|Pusan Natl Univ, Global Frontier R&D Ctr Hybrid Interface Mat, Busan 609735, South Korea;

    Pusan Natl Univ, Global Frontier R&D Ctr Hybrid Interface Mat, Busan 609735, South Korea|Pusan Natl Univ, Natl Core Res Ctr Hybrid Mat Solut, Busan 609735, South Korea;

    Pusan Natl Univ, Sch Mat Sci & Engn, Busan 609735, South Korea|Pusan Natl Univ, Global Frontier R&D Ctr Hybrid Interface Mat, Busan 609735, South Korea;

    Pusan Natl Univ, Sch Mat Sci & Engn, Busan 609735, South Korea|Pusan Natl Univ, Global Frontier R&D Ctr Hybrid Interface Mat, Busan 609735, South Korea|Pusan Natl Univ, Natl Core Res Ctr Hybrid Mat Solut, Busan 609735, South Korea;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Ti-doped DLC; Electrical resistivity; Electrochemical property; TEM; Hybrid PVD/PECVD;

    机译:掺钛DLC;电阻率;电化学性能;TEM;混合PVD / PECVD;

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号