机译:混合PVD / PECVD工艺制备掺钛DLC薄膜及其电化学性能
Pusan Natl Univ, Sch Mat Sci & Engn, Busan 609735, South Korea|Pusan Natl Univ, Global Frontier R&D Ctr Hybrid Interface Mat, Busan 609735, South Korea;
Pusan Natl Univ, Global Frontier R&D Ctr Hybrid Interface Mat, Busan 609735, South Korea|Pusan Natl Univ, Natl Core Res Ctr Hybrid Mat Solut, Busan 609735, South Korea;
Pusan Natl Univ, Sch Mat Sci & Engn, Busan 609735, South Korea|Pusan Natl Univ, Global Frontier R&D Ctr Hybrid Interface Mat, Busan 609735, South Korea;
Pusan Natl Univ, Sch Mat Sci & Engn, Busan 609735, South Korea|Pusan Natl Univ, Global Frontier R&D Ctr Hybrid Interface Mat, Busan 609735, South Korea|Pusan Natl Univ, Natl Core Res Ctr Hybrid Mat Solut, Busan 609735, South Korea;
Ti-doped DLC; Electrical resistivity; Electrochemical property; TEM; Hybrid PVD/PECVD;
机译:PVD-PECVD混合工艺:复合薄膜的合成和工艺理解
机译:混合PVD-PECVD沉积法合成Ag掺杂的氢化碳薄膜
机译:混合PVD-PECVD沉积法合成Ag掺杂的氢化碳薄膜
机译:PVD-PECVD杂交工艺:合成复合薄膜和工艺理解
机译:射频PACVD合成DLC薄膜及其摩擦学性能:工艺参数的影响。
机译:具有耐磨性和抗体化性质的多层DLC膜的合成
机译:纳米花状CuO / Cu(OH)2杂化薄膜:合成与电化学超电容性能