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DFT study on Al-doped defective graphene towards adsorption of elemental mercury

机译:铝掺杂缺陷石墨烯对元素汞吸附的DFT研究

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摘要

In this paper, we use the density functional theory to study the adsorption of mercury on the surface of intact, defective and doped graphene respectively. The results show that the adsorption energies of the elemental mercury on the intact and defective graphene surface are -0.220 ev and -0.342 ev, which belongs to physisorption process; while the energy on the surface of Al-doped graphene is -0.57 ev, which is a chemisorption process. Besides, the adsorption energy of Hg atom on the doped graphene surface grows as the number of Al atom grows. However, when increasing the number of Al-doped on the defective position, the adsorption of Hg will be affected. The best number of Al-doped on the single defective site is one. (C) 2017 Elsevier B.V. All rights reserved.
机译:在本文中,我们使用密度泛函理论研究了完整,有缺陷和掺杂的石墨烯表面上汞的吸附。结果表明,在完好无损的石墨烯表面上,元素汞的吸附能分别为-0.220 ev和-0.342 ev,属于物理吸附过程。 Al掺杂石墨烯表面的能量为-0.57 ev,是化学吸附过程。此外,Hg原子在掺杂石墨烯表面的吸附能随着Al原子数的增加而增加。然而,当增加缺陷位置上的Al掺杂的数量时,Hg的吸附将受到影响。在单个缺陷部位上掺杂铝的最佳数量是一个。 (C)2017 Elsevier B.V.保留所有权利。

著录项

  • 来源
    《Applied Surface Science》 |2018年第ptaa期|547-553|共7页
  • 作者单位

    North China Elect Power Univ, Sch Energy Power & Mech Engn, Beijing 102206, Peoples R China;

    North China Elect Power Univ, Sch Energy Power & Mech Engn, Beijing 102206, Peoples R China;

    North China Elect Power Univ, Sch Energy Power & Mech Engn, Beijing 102206, Peoples R China|Conservat Serv Co Ltd, Beijing 100052, Peoples R China;

    North China Elect Power Univ, Sch Elect & Elect Engn, Beijing 102206, Peoples R China;

    North China Elect Power Univ, Sch Energy Power & Mech Engn, Beijing 102206, Peoples R China;

    North China Elect Power Univ, Sch Energy Power & Mech Engn, Beijing 102206, Peoples R China;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Elemental mercury; Al-doping; Graphene; Density functional theory;

    机译:元素汞铝掺杂石墨烯密度泛函理论;
  • 入库时间 2022-08-18 03:04:38

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