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Effect of Li doping on the electric and pyroelectric properties of ZnO thin films

机译:锂掺杂对ZnO薄膜电热性能的影响

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Un-doped ZnO (UDZO) and Li-doped ZnO (LZO) polycrystalline thin films were grown on platinized silicon by pulsed laser deposition (PLD). The electrical properties were investigated on as-grown and annealed UDZO and LZO films with capacitor configuration, using top and bottom platinum electrodes. In the case of the as-grown films it was found that the introduction of Li increases the resistivity of ZnO and induces butterfly shape in the C-V characteristic, suggesting ferroelectric-like behavior in LZO films. The properties of LZO samples does not significantly changes after thermal annealing while the properties of UDZO samples show significant changes upon annealing, manifested in a butterfly shape of the C-V characteristic and resistive-like switching. However, the butterfly shape disappears if long delay time is used in the C-V measurement, the characteristic remaining non-linear. Pyroelectric signal could be measured only on annealed films. Comparing the UDZO results with those obtained in the case of Li: ZnO, it was found that the pyroelectric properties are considerably enhanced by Li doping, leading to pyroelectric signal with about one order of magnitude larger at low modulation frequencies than for un-doped samples. Although the results of this study hint towards a ferroelectric-like behavior of Li doped ZnO, the presence of real ferroelectricity in this material remains controversial. (C) 2017 Elsevier B.V. All rights reserved.
机译:通过脉冲激光沉积(PLD)在铂硅上生长未掺杂的ZnO(UDZO)和锂掺杂的ZnO(LZO)多晶薄膜。使用顶部和底部铂电极,研究了具有电容器配置的成膜退火退火UDZO和LZO膜的电性能。在成膜的情况下,发现引入Li会增加ZnO的电阻率,并在C-V特性中引起蝶形,这表明LZO膜具有铁电特性。热退火后,LZO样品的性能没有明显变化,而退火后,UDZO样品的性能却显示出显着变化,表现为C-V特性的蝶形和类似电阻的转换。但是,如果在C-V测量中使用较长的延迟时间,则蝶形消失,该特性保持非线性。热电信号只能在退火膜上测量。将UDZO结果与在Li:ZnO情况下获得的结果进行比较,发现Li掺杂显着提高了热电性能,导致低调制频率下的热电信号比未掺杂样品大约一个数量级。 。尽管这项研究的结果暗示了掺锂的ZnO具有类似铁电的行为,但在这种材料中是否存在真正的铁电仍存在争议。 (C)2017 Elsevier B.V.保留所有权利。

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