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Comparison of the surfaces and interfaces formed for sputter and electroless deposited gold contacts on CdZnTe

机译:比较在CdZnTe上溅射和化学沉积金触点形成的表面和界面

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Cadmium zinc telluride (CdZnTe) is a leading sensor material for spectroscopic X/gamma-ray imaging in the fields of homeland security, medical imaging, industrial analysis and astrophysics. The metal-semiconductor interface formed during contact deposition is of fundamental importance to the spectroscopic performance of the detector and is primarily determined by the deposition method. A multi-technique analysis of the metal-semiconductor interface formed by sputter and electroless deposition of gold onto (111) aligned CdZnTe is presented. Focused ion beam (FIB) cross section imaging, X-ray photoelectron spectroscopy (XPS) depth profiling and current-voltage (IV) analysis have been applied to determine the structural, chemical and electronic properties of the gold contacts. In a novel approach, principal component analysis has been employed on the XPS depth profiles to extract detailed chemical state information from different depths within the profile. It was found that electroless deposition forms a complicated, graded interface comprised of tellurium oxide, gold/gold telluride particulates, and cadmium chloride. This compared with a sharp transition from surface gold to bulk CdZnTe observed for the interface formed by sputter deposition. The electronic (IV) response for the detector with electroless deposited contacts was symmetric, but was asymmetric for the detector with sputtered gold contacts. This is due to the electroless deposition degrading the difference between the Cd-and Te-faces of the CdZnTe (111) crystal, whilst these differences are maintained for the sputter deposited gold contacts. This work represents an important step in the optimisation of the metal-semiconductor interface which currently is a limiting factor in the development of high resolution CdZnTe detectors. (C) 2017 Elsevier B.V.
机译:碲化镉锌(CdZnTe)是用于国土安全,医学成像,工业分析和天体物理学领域的光谱X /γ射线成像的领先传感器材料。在接触沉积过程中形成的金属-金属界面对于检测器的光谱性能至关重要,并且主要由沉积方法确定。提出了一种通过将金溅射和化学沉积到(111)取向的CdZnTe上形成的金属-半导体界面的多技术分析方法。聚焦离子束(FIB)截面成像,X射线光电子能谱(XPS)深度轮廓分析和电流-电压(IV)分析已用于确定金触点的结构,化学和电子特性。在一种新颖的方法中,已经对XPS深度剖面进行了主成分分析,以从剖面内不同深度提取详细的化学状态信息。发现无电沉积形成了复杂的,渐变的界面,该界面由氧化碲,金/碲化金/金微粒和氯化镉组成。与通过溅射沉积形成的界面观察到的从表面金到块状CdZnTe的急剧转变相比。具有化学沉积触点的探测器的电子(IV)响应是对称的,但具有溅射金触点的探测器的电子(IV)响应是不对称的。这是由于无电沉积会降低CdZnTe(111)晶体的Cd和Te面之间的差异,而对于溅射沉积的金触点,这些差异得以保持。这项工作代表了优化金属-半导体界面的重要一步,目前这是开发高分辨率CdZnTe检测器的限制因素。 (C)2017爱思唯尔B.V.

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