机译:高通量组合化学浴沉积:用锑掺杂Cu(In,Ga)Se膜的情况
Univ Elect Sci & Technol China, Sch Energy Sci & Engn, 2006 Xiyuan Ave, Chengdu 611731, Sichuan, Peoples R China;
Univ Elect Sci & Technol China, Sch Energy Sci & Engn, 2006 Xiyuan Ave, Chengdu 611731, Sichuan, Peoples R China;
Univ Elect Sci & Technol China, Sch Energy Sci & Engn, 2006 Xiyuan Ave, Chengdu 611731, Sichuan, Peoples R China;
Univ Elect Sci & Technol China, Sch Energy Sci & Engn, 2006 Xiyuan Ave, Chengdu 611731, Sichuan, Peoples R China;
Univ Elect Sci & Technol China, Sch Energy Sci & Engn, 2006 Xiyuan Ave, Chengdu 611731, Sichuan, Peoples R China;
Univ Elect Sci & Technol China, Sch Energy Sci & Engn, 2006 Xiyuan Ave, Chengdu 611731, Sichuan, Peoples R China;
Univ Elect Sci & Technol China, Sch Energy Sci & Engn, 2006 Xiyuan Ave, Chengdu 611731, Sichuan, Peoples R China;
Univ Elect Sci & Technol China, Sch Energy Sci & Engn, 2006 Xiyuan Ave, Chengdu 611731, Sichuan, Peoples R China;
Chemical bath deposition; High throughput combinatorial synthesis; CIGS; Antimony doping;
机译:Na掺杂对化学浴沉积法制备Cu_2Se薄膜的结构,光学和电学性质的影响
机译:未掺杂和双掺杂的N-CU_2SE薄膜的化学浴沉积及其光电性能
机译:通过化学浴沉积和沉积后处理制备硒化锑多晶薄膜
机译:ZnS缓冲层化学浴沉积过程中Cu_2ZnSnS_4和Cu_2ZnSnSe_4中锌掺杂的第一性原理研究
机译:通过金属有机化学气相沉积相选择合成Tl-Ba-Ca-Cu-O薄膜和多层结构。工艺优化,相变,电学表征和微结构发展。
机译:化学浴和表面沉积法制备Cu(InGa)Se2太阳能电池板(CdZn)S缓冲层的比较研究
机译:掺杂浓度对由化学浴沉积法生长的内在N型ZnO(I-ZnO)和(Cu,Na和K)掺杂P型ZnO薄膜的光学和电性能的影响