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首页> 外文期刊>IEEE Transactions on Applied Superconductivity >Compact Superconducting Lookup Table Composed of Two-Dimensional Memory Cell Array Reconfigured by External DC Control Currents
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Compact Superconducting Lookup Table Composed of Two-Dimensional Memory Cell Array Reconfigured by External DC Control Currents

机译:紧凑型超导查找表由外部直流控制电流重新配置的二维存储单元阵列组成

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We investigated the hardware implementation of an area-efficient superconducting lookup table (LUT) based on a single flux quantum (SFQ) logic by using a newly proposed small memory cell. The memory cell is composed of a nondestructive read-out (NDRO) flip-flop with input circuits that convert the input dc current to an SFQ pulse signal. The datum can be written to the selected memory cell in the 2-D memory cell array by applying both x- and y-directional dc control currents. The data stored in the memory cell array can he reset simultaneously by applying a dc current to a common reset line. By employing the new memory cell, wiring for reconfiguring the data and resetting the memory cell array can be drastically simplified compared to that of the conventional SFQ LUT. We implemented and tested the memory cell and confirmed the correct operation with wide dc bias and input-current margins. We designed the 16-b LUT using the designed memory cells. The circuit area and the number of Josephson junctions of the 16-b LUT is reduced by approximately 24 and 41%, respectively, compared to those of the LUT based on the conventional architecture. We experimentally obtained the correct operation and reconfiguration of the 4-b LUT that uses the new memory cells with a normalized bias margin of -22 to +7%.
机译:我们通过使用新提出的小存储单元来研究基于单磁通量子(SFQ)逻辑的区域有效超导查找表(LUT)的硬件实现。存储器单元由具有输入电路的非破坏性读出(Ndro)触发器组成,该输入电路将输入DC电流转换为SFQ脉冲信号。可以通过应用X和Y方向直流控制电流来将数据写入2-D存储单元阵列中的所选存储单元。存储在存储单元阵列中的数据可以通过将DC电流应用于公共复位线来同时复位。通过采用新的存储器单元,与传统的SFQ LUT相比,可以大大简化用于重新配置数据并重置存储单元阵列的接线。我们实施并测试了存储器单元,并通过宽的DC偏置和输入电流边距确认了正确的操作。我们使用设计的存储单元设计了16-B LUT。与基于传统架构的LUT相比,16-B LUT的电路区域和Josephson结的数量分别减小了大约24和41%。我们通过实验获得了使用新的存储器单元的4-B LUT的正确操作和重新配置,该新存储器单元具有-22至+ 7%的标准化偏置余量。

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