...
首页> 外文期刊>Applied Superconductivity, IEEE Transactions on >Investigation of Dynamic Behaviors of Low-Level Dissipation at ${rm YBa}_{2}{rm Cu}_{3}{rm O}_{7}$ Grain Boundaries Using Low-Temperature Near-Field Scanning Microwave Microscopy
【24h】

Investigation of Dynamic Behaviors of Low-Level Dissipation at ${rm YBa}_{2}{rm Cu}_{3}{rm O}_{7}$ Grain Boundaries Using Low-Temperature Near-Field Scanning Microwave Microscopy

机译:使用低温近场扫描微波显微镜研究$ {rm YBa} _ {2} {rm Cu} _ {3} {rm O} _ {7} $晶界的低耗散动力学行为

获取原文
获取原文并翻译 | 示例
           

摘要

Near-field scanning microwave microscopy (NSMM) provides a unique nondestructive approach for detection of local dissipation with high sensitivity and high spatial resolution. With recently improved NSMM probes of spatial resolution of up to 400 nm ($sim 10^{-6}$ wavelength), detection of dissipation was achieved on YBCO microbridges at currents more than three orders of magnitude below the $J_{c}(T)$. In this work, we report characterization of the dynamic behavior of low-level dissipation at the grain boundary of ${rm YBa}_{2}{rm Cu}_{3}{rm O}_{7-delta}$ microbridges as function of time and applied electrical current. On higher-angle grain boundary, the dissipation develops rapidly with increasing current and shows approximately linear dependence on current. On lower-angle grain boundary, nonlinear features were observed and attributed to bi-modal pattern of dissipation evolution of nucleation of isolated hot spots and their evolution. Comparison with the similar ${rm NSMM}+IV$ measurement made on the “bulk” part of the same ${rm YBa}_{2}{rm Cu}_{3}{rm O}_{7-delta}$ microbridges on a reduced temperature scale shows higher dissipation on the grain boundary can be mostly attributed to the lower $T_{c}$ values on grain boundaries.
机译:近场扫描微波显微镜(NSMM)为检测局部耗散提供了独特的非破坏性方法,具有高灵敏度和高空间分辨率。使用最近改进的空间分辨率高达400 nm($ sim 10 ^ {-6} $波长)的NSMM探针,在YBCO微桥上以低于$ J_ {c}(3个数量级以上)的电流实现了耗散检测。 T)$。在这项工作中,我们报告了$ {rm YBa} _ {2} {rm Cu} _ {3} {rm O} _ {7-delta} $微桥的晶界处的低耗散动态行为的表征。作为时间和施加电流的函数。在较高角度的晶界上,耗散随着电流的增加而迅速发展,并显示出对电流的近似线性依赖性。在下角晶界上,观察到非线性特征,并且归因于孤立热点成核及其演化的耗散演化的双峰模式。与在相同$ {rm YBa} _ {2} {rm Cu} _ {3} {rm O} _ {7-delta}的“批量”部分进行的类似$ {rm NSMM} + IV $测量的比较在减小的温度范围内的$微桥表明,晶界上较高的耗散主要归因于晶界上较低的$ T_ {c} $值。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号