首页> 外文期刊>Applied Solar Energy >Recombination in semiconductors with deep impurities
【24h】

Recombination in semiconductors with deep impurities

机译:具有深杂质的半导体中的复合

获取原文
获取原文并翻译 | 示例
       

摘要

The results of papers dealing with computation of the recombination processes of nonequilibrium electrons and holes in semiconductors with deep impurities are reviewed. It is shown that at high excitation levels, when many defects and defect-impurity complexes appear in the semiconductor, the number of efficiently working recombination centers becomes a function of the excitation level of the material. As a result, recombination inhibition takes place, which leads to change of the operating parameters of the devices, in particular of the photocells. [PUBLICATION ABSTRACT]
机译:综述了处理深杂质半导体中非平衡电子和空穴复合过程的论文结果。结果表明,在高激发能级下,当半导体中出现许多缺陷和缺陷-杂质络合物时,有效工作的复合中心的数量成为材料激发能级的函数。结果,发生重组抑制,这导致装置,特别是光电池的操作参数的改变。 [出版物摘要]

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号