Growth and spectral sensitivity of pSi-n(Si2)1-x(ZnSe)x structures

摘要

Epitaxial layers of n-type (Si2)1-x(ZnSe)x solid solution (0 ≤ x ≤ 0.01) were grown on p-Si substrates by liquid-phase epitaxy from a limited volume of a Sn solution-melt. The photosensitivity spectra of the pSi-n(Si2)1-x(ZnSe)x structure were analyzed. A sensitivity peak at E [asymptotically =] 2.3 eV was revealed, which is likely conditioned by the ZnSe molecular level located 1.2. eV below the ceiling of the Si valence band. [PUBLICATION ABSTRACT]