Photovoltaic properties of microrelief GaAs structures

R A Muminov M N Tursunov U B Abdiev Z S Settarova

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Photovoltaic properties of microrelief GaAs structures

机译：微浮雕砷化镓结构的光伏性能

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The formation of microrelief on the front surface of AlGaAs/GaAs cells is proposed. The technology of formation of diffusion p-n junctions has been developed and AlGaAs/GaAs-based photosensitive structures have been prepared. Their spectral characteristics are studied. [PUBLICATION ABSTRACT]

机译：提出了在AlGaAs / GaAs电池的正面形成微浮雕。已经开发了形成扩散p-n结的技术，并且已经制备了基于AlGaAs / GaAs的光敏结构。研究了它们的光谱特性。 [出版物摘要]

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《Applied Solar Energy》 |2008年第2期|p.1-4|共4页
作者
R A Muminov M N Tursunov U B Abdiev Z S Settarova;
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收录信息美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
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入库时间 2022-08-17 23:18:13

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2. On the Properties of Photovoltaic X-ray Detectors Based on GaAs Epitaxial Structures [J] . V. F. Dvoryankin, Yu. M. Dikaev, A. A. Kudryashiov Technical physics . 2004,第6期

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4. MICRORELIEF P-N-JUNCTIONS AND DIFFUSION THOSE FOR HETEROPHOTOCONVERTER STRUCTURES Al (In) GaAs-GaAs [C] . European photovoltaic solar energy conference . 2004

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8. Electronic Properties of Pseudomorphic InGaAs/AlGaAs (ON GaAs) and InGaAs/InAlAs (On InP) MODFET Structures [R] . Jaffe, M., Sekiguchi, Y., East, J., 1988

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Photovoltaic properties of microrelief GaAs structures

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