Impurity thermophotovoltaic effect of the grain boundaries of technical-grade silicon

摘要

It is shown that in photocells based on technical-grade polycrystalline Si that are exposed to subband photons, the current and voltage generated are higher than in single-crystalline Si photocells. This is explained as a manifestation of the impurity thermophotovoltaic effect of the grain boundaries of technical-grde polycrystalline Si. [PUBLICATION ABSTRACT]