Electrophysical properties of solar polycrystalline silicon and its n+-p structures at elevated temperatures

摘要

Results of measurements of electrophysical parameters of polycrystalline silicon (PS) and p-n-junction based on it in the temperature ranges 20-500 and 20-200° C, respectively, are presented. Correlation is found between the temperature dependences of the conductivity, mobility, and concentration of the current carriers in PS and the current generation characteristics in n +-p-structures, including those caused by the impurity photovoltaic effect. [PUBLICATION ABSTRACT]