Memristive devices based on mass printed organic resistive switching layers

摘要

Resistive random-access memory is a candidate for next-generation non-volatile memory architectures. In this study, we use flexographic roll-to-roll printing technology for deposition of the resistive layer, a printing method that allows fast and cost-effective fabrication to create non-volatile resistive memory devices. Metal-free organic polymers blends composed of poly(methyl methacrylate) (PMMA) and a surplus of poly(vinyl alcohol) (PVA) serve as the active layer. Microscopic studies of the roll-to-roll printed layers show circular domains of PMMA embedded in PVA. The influence of the PMMA content in the polymer blend is investigated with respect to the performance and reliability of the resistive memory cells. Electrical characterization reveals a retention time of at least eleven days, a R_(off)/R_(on) ratio of approx. two orders and write/ erase voltages of+1/-2 V.