首页> 外文期刊>Applied Physics >Upconversion temperature sensing assists the understanding of light-emitting properties in Gd_2(MoO_4)_3:Y~(3+)/Yb~(3+)/Er~(3+)-based LED
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Upconversion temperature sensing assists the understanding of light-emitting properties in Gd_2(MoO_4)_3:Y~(3+)/Yb~(3+)/Er~(3+)-based LED

机译:上转换温度传感有助于了解GD_2(MOO_4)_3:Y〜(3 +)/ YB〜(3 +)/ ER〜(3 +)的LED中发光性能

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摘要

In this work, the upconversion temperature sensing was used to study the light-emitting properties of Gd_2(MoO_4)_3:Y~(3+)/ Yb~(3+)/Er~(3+)-based LED. In order to obtain high-intensity upconversion luminescence, we studied the effect of Y~(3+) doping concentration on the photon upconversion of Yb~(3+)/Er~(3+)-activated Gd_2(MoO_4)_3under 940 nm excitation. We also explored the calibration of upconversion temperature sensing and established a reliable temperature scale. Finally, the light-emitting properties of an operating LED that consisted of a 940-nm semiconductor chip and the optimum phosphor were studied by using the upconversion luminescence thermometry.
机译:在这项工作中,使用基于Gd_2(Moo_4)_3:Y〜(3 +)/ Yb〜(3 +)的LED的LED的发光性能来研究GD_2(Moo_4)_3:Y〜(3 +)/ YB〜(3 +)的LED的发光性能。为了获得高强度上变化发光,我们研究了Y〜(3+)掺杂浓度对Yb〜(3 +)/ ER〜(3 +) - 活化的Gd_2(moo_4)_3下的效果对yB〜(3 +)/ ER〜(3 +) - 激活的效果 - 940nm励磁。我们还探讨了上转换温度传感的校准,并建立了可靠的温度尺度。最后,通过使用上变发光温度测定由940nm半导体芯片组成的操作LED的发光性能和最佳荧光体。

著录项

  • 来源
    《Applied Physics》 |2020年第6期|433.1-433.7|共7页
  • 作者单位

    Qiuzhen College Huzhou University Huzhou 313000 Zhejiang China;

    College of Science Huzhou University Huzhou 313000 Zhejiang China;

    College of Science Huzhou University Huzhou 313000 Zhejiang China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Upconversion; Temperature sensing; LED;

    机译:上转换;温度传感;引领;

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