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首页> 外文期刊>Applied Physics >Synthesis and characterization of the chemically deposited SnS_(1-x)Se_x thin films: structural, linear and nonlinear optical properties
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Synthesis and characterization of the chemically deposited SnS_(1-x)Se_x thin films: structural, linear and nonlinear optical properties

机译:化学沉积SnS_(1-x)Se_x薄膜的合成与表征:结构,线性和非线性光学性质

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摘要

This article reported the synthesis of tin sulfide selenide (SnS_(1-x)Se_x) thin films with different compositions (0≤x≤ 1) using a cost-effective chemical bath deposition technique. The structural properties of the chemically synthesized SnS_(1-x)Se_x thin films were analyzed by means of the X-ray diffraction (XRD) and field emission scanning electron microscope (FE-SEM). The XRD results demonstrate that all the chemically synthesized SnS_(1-x)Se_x thin films are polycrystalline and displayed an orthorhombic phase corresponding to the different compositions. The compositional elements of the SnS_(1-x)Se_x thin films were investigated via an energy dispersive X-ray analysis (EDAX). The optical study on the SnS_(1-x)Se_x thin films displayed that the chemically deposited SnS_(1-x)Se_x films exhibited a direct allowed optical transition and by increasing the Se content the magnitudes of the direct bandgap were decreased from 1.41-1.23 eV while the Urbach energy was increased. The effect of composition on the skin depth δ, absorption coefficient α, linear refractive index n and the static refractive index n_o of the Sn_(1-x)Se_x thin films was studied. Additionally, the results displayed that there is an improvement in the magnitudes of the nonlinear refractive index n_2, optical conductivity, third-order nonlinear optical susceptibility x~((3)) and the electrical conductivity of the SnS_(1-x)Se_x thin films occurred by increasing the selenium content.
机译:本文报道了使用经济有效的化学浴沉积技术合成具有不同组成(0≤x≤1)的硒化硒化锡(SnS_(1-x)Se_x)薄膜的方法。通过X射线衍射(XRD)和场发射扫描电子显微镜(FE-SEM)分析了化学合成的SnS_(1-x)Se_x薄膜的结构性能。 XRD结果表明,所有化学合成的SnS_(1-x)Se_x薄膜都是多晶的,并显示出对应于不同组成的正交晶相。通过能量色散X射线分析(EDAX)研究了SnS_(1-x)Se_x薄膜的组成元素。对SnS_(1-x)Se_x薄膜的光学研究表明,化学沉积的SnS_(1-x)Se_x薄膜表现出直接允许的光学跃迁,并且通过增加Se含量,直接带隙的幅度从1.41减小。 Urbach能量增加时为1.23 eV。研究了组成对Sn_(1-x)Se_x薄膜的趋肤深度δ,吸收系数α,线性折射率n和静态折射率n_o的影响。此外,结果表明,SnS_(1-x)Se_x Thin的非线性折射率n_2,光导率,三阶非线性光学磁化率x〜((3))和电导率的幅度都有所改善。通过增加硒含量产生薄膜。

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  • 来源
    《Applied Physics 》 |2020年第3期| 177.1-177.10| 共10页
  • 作者

  • 作者单位

    Electron Microscope and Thin Films Department Physics Research Division National Research Centre Dokki Giza 12622 Egypt;

    Electron Microscope and Thin Films Department Physics Research Division National Research Centre Dokki Giza 12622 Egypt Materials Physics and Energy Laboratory College of Sciences and Art ArRass-Qassim University Arrass 51921 Kingdom of Saudi Arabia;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Tin sulfide selenide; Chemical bath deposition technique; X-ray analysis; Skin depth; Urbach's energy; Nonlinear refractive index;

    机译:硫化锡硒化物;化学浴沉积技术;X射线分析;皮肤深度;Urbach的能量;非线性折射率;

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