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Surface and electro-optical properties of amorphous Sb_2S_3 thin films

机译:非晶态Sb_2S_3薄膜的表面和光电特性

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摘要

Sb2S3 thin films to be used in optoelectronic applications were produced on glass substrates, via chemical bath deposition method (CBD) at different pH values. The optical properties of these films such as T%, R%, n, k, epsilon(1) and epsilon(2) (real and imaginary) were calculated using the absorbance values measured at room temperature with UV spectrophotometer. Critical surface tension was measured by Zisman method, and found as 43.2, 97.4, 150.7 and 123.8 mN/m for pH: 9, 10, 11 and 12. Film thicknesses and surface roughness (R-q) were measured to be 125; 412; 205 and 138nm, and 1.64; 30.31; 49.49 and 19.76nm for pH: 9, 10, 11 and 12, respectively. Optical band gap (E-gap) was calculated as 2.24; 2.11; 2.25 and 2.32eV for pH: 9, 10, 11 and 12, respectively. Average electrical resistivity of the Sb2S3 thin films was calculated to be 35.41; 36.81; 36.76 and 28.72 cm for pH: 9, 10, 11 and 12, respectively. According to the results obtained, usage areas of these films in optoelectronic applications are discussed.
机译:通过化学浴沉积法(CBD)在不同的pH值下,在玻璃基板上生产了用于光电应用的Sb2S3薄膜。使用在室温下使用紫外分光光度计测得的吸光度值来计算这些薄膜的光学特性,例如T%,R%,n,k,ε(1)和ε(2)(实部和虚部)。临界表面张力通过Zisman方法测量,并且对于pH:9、10、11和12发现为43.2、97.4、150.7和123.8mN / m。膜厚度和表面粗糙度(R-q)被测量为125;膜厚和表面粗糙度(R-q)为125。 412; 205和138nm,以及1.64; 30.31; pH分别为49.49和19.76nm:9、10、11和12。光学带隙(E-gap)计算为2.24; 2.11; pH值分别为2.25和2.32eV:9、10、11和12。 Sb2S3薄膜的平均电阻率经计算为35.41; 36.81; pH值分别为36.76和28.72厘米:9、10、11和12。根据获得的结果,讨论了这些膜在光电应用中的使用领域。

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  • 来源
    《Applied Physics》 |2019年第3期|198.1-198.16|共16页
  • 作者单位

    Karabuk Univ Dept Elect Elect Engn Fac Engn TR-78050 Karabuk Turkey;

    Karabuk Univ Dept Met & Mat Sci Engn Fac Engn TR-78050 Karabuk Turkey;

    Erciyes Univ Dept Sci Educ Fac Educ TR-38039 Kayseri Turkey|Erciyes Teknopk Bldg 1 41 TR-38039 Kayseri Turkey;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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