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Composition dependence of structural and linear and non-linear optical properties of CdS_(1-x)Mn_x semiconducting thin films

机译:CdS_(1-x)Mn_x半导体薄膜的结构,线性和非线性光学性质的组成依赖性

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摘要

This work reported the structure and optical investigations of CdS1-xMnx (x=0.00, 0.02, 0.04, 0.06, 0.08, 0.10) thin films. The thin films of CdS1-xMnx with different compositions were synthesized using electron beam evaporation method under high vacuum conditions at room temperature. X-ray diffraction (XRD) analyses revealed the polycrystalline nature of the deposited films. The observed diffraction peaks were well fitted with a hexagonal crystal structure. In addition, the intensity of XRD peaks decreased by increasing the Mn concentration indicating a monotonical deterioration in the crystalline quality by the doping. The (101) plane is the preferential orientation for the crystal growth of the studied films. The film thickness as well as a refractive index were calculated by Swanepoel's method. The direct and indirect electronic transitions were found to be responsible for the high absorption process in the studied films. Furthermore, both direct and indirect bandgaps decreased with increasing the Mn content. Other optical parameters such as optical conductivity, real and imaginary parts of dielectric constant, dispersion energy, and dissipation factor were determined and showed a strong dependence on the Mn content. These findings were discussed in terms of the localized states.
机译:这项工作报道了CdS1-xMnx(x = 0.00,0.02,0.04,0.06,0.08,0.10)薄膜的结构和光学研究。在室温,高真空条件下,采用电子束蒸发法合成了不同组成的CdS1-xMnx薄膜。 X射线衍射(XRD)分析揭示了沉积膜的多晶性质。观察到的衍射峰非常适合六方晶体结构。另外,通过增加Mn浓度,XRD峰的强度降低,这表明通过掺杂晶体质量的单调下降。 (101)平面是所研究薄膜晶体生长的优先方向。通过Swanepoel方法计算膜厚度以及折射率。发现直接和间接电子跃迁是所研究薄膜中高吸收过程的原因。此外,直接和间接带隙都随着Mn含量的增加而降低。确定了其他光学参数,例如光导率,介电常数的实部和虚部,色散能量和耗散因数,并显示出对Mn含量的强烈依赖性。这些发现是根据本地化状态进行讨论的。

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  • 来源
    《Applied Physics》 |2019年第7期|483.1-483.19|共19页
  • 作者单位

    Assiut Univ, Fac Sci, Dept Phys, Assiut 71516, Egypt;

    Assiut Univ, Fac Sci, Dept Phys, Assiut 71516, Egypt;

    Assiut Univ, Fac Sci, Dept Phys, Assiut 71516, Egypt;

    Jouf Univ, Coll Sci, Dept Phys, POB 2014, Al Jouf, Sakaka, Saudi Arabia|Sohag Univ, Fac Sci, Dept Phys, Sohag 82524, Egypt;

    Al Azhar Univ, Fac Sci, Dept Phys, Assiut 71542, Egypt;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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