Enhancement of electro-optical and dielectric properties of CdSeS/ ZnS semiconductor quantum-dot-doped nematic liquid crystals in the presence of UV-illumination effect

摘要

In this study, we have investigated ultraviolet (UV) illumination effect on electro-optical and dielectric properties of varying concentration of CdSeS/ZnS semiconductor quantum-dot-doped 5CB nematic liquid crystal. Dielectric measurements were made from 10kHz to 10MHz frequency ranges in dark and under UV-illumination conditions. Electro-optical measurements were also performed with a voltage-dependence light transmission system at 10kHz frequency in dark and under UV-illumination conditions. Significant physical parameters such as relaxation frequency (f(R)), real and imaginary components of complex dielectric permittivity (epsilon and epsilon), and threshold voltage (V-th) values were obtained from experimental results. Results show that UV-illumination effects cause considerable improvements on electro-optical and dielectric characteristic of investigated samples.