首页> 外文期刊>Applied Physics A: Materials Science & Processing >Electro-optic Properties Of Epitaxial Sr_(0.6)ba_(0.4)nb_2o_6 Films Grown On Mgo Substrates Using Li_xni_(2-x)o Buffer Layer
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Electro-optic Properties Of Epitaxial Sr_(0.6)ba_(0.4)nb_2o_6 Films Grown On Mgo Substrates Using Li_xni_(2-x)o Buffer Layer

机译:使用Li_xni_(2-x)o缓冲层在Mgo衬底上生长的外延Sr_(0.6)ba_(0.4)nb_2o_6薄膜的电光特性

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Textured Li_xNi_(2-x)O (LNO) thin films have been fabricated on (001)MgO substrates by pulsed laser deposition technique. The as-deposited LNO films shows a conductivity of 2.5 × 10~3 Ωm and possess a transmittance of about 35% in the visible region. Subsequent deposition of Sr_(0.6)Ba_(0.4)Nb_2O_6 (SBN60) thin film on these LNO-coated MgO substrates resulted in a textured SBN layer with a <001> orientation perpendicular to the substrate plane. Phi scans on the (221) plane of the SBN layer indicated that the films have two in-plane orientations with respect to the substrate. The SBN unit cells were rotated in the plane of the film by ±8.2° as well as ±45° with respect to the LNO/MgO substrate. Besides the highly (00l)-orientation, the SBN films also exhibited a dense mi-crostructure as shown by scanning electron microscopy. The electro-optic coefficient (r_(33)) of the SBN film was measured to be 186 pm/V. On the basis of our results, we have demonstrated that the LNO film can be used as a buffer layer as well as a transparent bottom electrode for waveguide applications. The SBN/LNO heterostructure is also a suitable candidate for integrated electro-optics devices.
机译:已通过脉冲激光沉积技术在(001)MgO衬底上制造了织构化的Li_xNi_(2-x)O(LNO)薄膜。沉积的LNO薄膜的电导率为2.5×10〜3Ωm,在可见光区域的透射率约为35%。随后在这些涂覆有LNO的MgO衬底上沉积Sr_(0.6)Ba_(0.4)Nb_2O_6(SBN60)薄膜,导致织构的SBN层垂直于衬底平面的<001>方向。在SBN层的(221)平面上进行的phi扫描表明,薄膜相对于基板具有两个平面内取向。相对于LNO / MgO基板,SBN晶胞在薄膜平面中旋转了±8.2°和±45°。除高度(00l)取向外,SBN膜还显示出致密的微观结构,如扫描电子显微镜所示。 SBN膜的电光系数(r_(33))经测量为186 pm / V。根据我们的结果,我们证明了LNO膜可用作波导应用的缓冲层以及透明底部电极。 SBN / LNO异质结构也是集成电光器件的合适候选者。

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