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First-order Phase Transition Characteristic Of The High Temperature Metal-semiconductor Transition In [ca_2coo_3]_(0.62)[coo_2]

机译:[ca_2coo_3] _(0.62)[coo_2]中高温金属-半导体跃迁的一阶相变特性

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摘要

Transportation and thermodynamic properties of misfit-layered polycrystalline [Ca_2CoO_3]_(0.62)[CoO_2] were measured in order to clarify the nature of metal-semiconductor transition (MST) at T_(MS) ≈ 400 K, above which the simultaneous decrease of resistivity and increase of thermopower with temperature give rise to a great enhancement of thermoelectric power factor up to 1000 K. A first-order phase transition characteristic around T_(MS) was revealed by anomalies of resistivity, differential scanning calorimetry, and thermal expansion. The first-order characteristic of the MST can be rationalized from the Virial theorem at an itinerant to localized electron transition in the narrow e~T band within the [CoO_2] plane. Above T_(MS), the reduction of the retained delocalized states within the matrix of localized states and the enhancement of charge carrier effective mass with increasing temperature might account for the considerable enhancement of the thermopower.
机译:测量错配层的多晶[Ca_2CoO_3] _(0.62)[CoO_2]的输运和热力学性质,以阐明在T_(MS)≈400 K时金属-半导体转变(MST)的性质,在该温度下,T_(MS)≈同时下降电阻率和热功率随温度的增加大大提高了高达1000 K的热电功率因数。电阻率,差示扫描量热法和热膨胀异常揭示了T_(MS)附近的一阶相变特性。 MST的一阶特征可以在[CoO_2]平面内的狭窄e〜T波段中从迭代到局部电子跃迁的维里定理得到合理化。在T_(MS)以上,局部状态矩阵内保留的离域状态的减少以及温度升高导致电荷载流子有效质量的增加可能说明了热功率的显着提高。

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