Ascent of open-circuit voltage on diamond-like carbon photovoltaic cell by infrared heating-assisted pulsed-laser deposition

摘要

Phosphorus-doped diamond-like carbon (DLC) films were deposited on quartz and p-type silicon (p-Si) substrates by pulsed-laser deposition. Open-circuit voltage (V_(oc)) and short-circuit density (I_(sc)/cm~2) from a heating process converted from one type of electrode to another and the two types of electrode pattern are shown by the Ⅴ-Ⅰ characteristics. The first heating process was by a ceramic heater, and the other was by an infrared heater. We adopted two electrode patterns, from a bipecti-nate electrode and a plot pattern electrode, to measure electric photovoltaic characteristics. We were able to upgrade V_(oc) and I_(sc)/cm~2 to 35～45 mV, and 0.24 μA/cm~2, respectively, under infrared heating. V_(oc) by the plot pattern electrode was over 2 V under infrared heating and ceramic heating did not match this on deposition by the PLD method.