Microstructured silicon created with a nanosecond neodymium-doped yttrium aluminum garnet laser

摘要

We produce microstructured silicon using frequency doubled, nanosecond Nd:YAG pulses in SF_6 gas. The micro-penitentes formed are up to 20 μm tall with a sulfur concentration of 0.5% near the surface. The infrared absorption is increased to near unity and extends well below the original bandgap far into the infrared. These data are similar to results reported by others using more complicated and less economical femtosecond titanium sapphire and picosecond and nanosecond excimer lasers.