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Electronic structure and optical property of 3d transition metal doped (5,5) boron nitride nanotube

机译:掺杂(5,5)的3d过渡金属氮化硼纳米管的电子结构和光学性质

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摘要

The electronic structure and magnetic and optical properties of a 3d transition metal M (M = V, Cr, Mn, Fe) doped (5,5) boron nitride (B_(19)MN_(20)) nanotube are investigated by using the first-principles projector augmented wave potential within density functional theory under the generalized gradient approximation. It is found that B19VN20 and B_(19)MnN_(20) systems are ideal candidates for spintronic applications, and the B_(19)CrN_(20) system seems to be a promising diluted magnetic semiconductor. The analyses of optical dielectric functions show that B_(19)CrN_(20) exhibits a new main peak at about 0.3 eV, and thus may be utilized in fields that are associated with infrared technology, such as infrared detectors, infrared masers, and so on.
机译:通过使用第一种方法研究掺杂了(5,5)氮化硼(B_(19)MN_(20))的3d过渡金属M(M = V,Cr,Mn,Fe)的电子结构以及磁和光学性质-原理投影仪在广义梯度近似下的密度泛函理论内增强了波势。发现B19VN20和B_(19)MnN_(20)系统是自旋电子学应用的理想候选者,而B_(19)CrN_(20)系统似乎是有前途的稀释磁半导体。光学介电函数的分析表明,B_(19)CrN_(20)在约0.3 eV处出现一个新的主峰,因此可用于与红外技术相关的领域,例如红外探测器,红外脉石等。上。

著录项

  • 来源
    《Applied Physics》 |2012年第3期|p.601-606|共6页
  • 作者单位

    College of Physics and Information Technology, Shaanxi Normal University, Xi'an 710062, Shaanxi, P.R. China;

    College of Physics and Information Technology, Shaanxi Normal University, Xi'an 710062, Shaanxi, P.R. China;

    College of Physics and Information Technology, Shaanxi Normal University, Xi'an 710062, Shaanxi, P.R. China;

    State Key Laboratory for Mechanical Behavior of Materials, Xian Jiaotong University, Xi'an 710049, Shaanxi, P.R. China;

    ICMMO/LEMHE, UMR CNRS 8182, Universite Paris-Sud 11, 91405 Orsay Cedex, France;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    boron nitride nanotubes; electronic structure; optical properties; ab-initio calculations;

    机译:氮化硼纳米管电子结构光学性质从头算;

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