机译:具有InGaN底层的紫外线InGaN / GaN多量子阱发光二极管的发光效率的提高
State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China;
State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China;
State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China;
State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China;
State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China;
State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China;
State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China;
State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China;
State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China;
State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China;
State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China;
Institute of Photonics & Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan;
Department of Electronic Engineering, Tungnan University, Taipei 22202, Taiwan;
Department of Electronic Engineering, Tungnan University, Taipei 22202, Taiwan;
机译:通过通过GaN覆盖层控制消除InGaN / GaN多量子阱结构中的V缺陷,提高了蓝色发光二极管的效率
机译:含Si重掺杂GaN过渡层的375 nm紫外InGaN / AIGaN发光二极管的生长模式,内部量子效率和器件性能的研究
机译:基于GaN / IngaN的多量子阱发光二极管效率下垂的效率下垂通过不同的Si掺杂和厚度在阻挡层中
机译:使用AlGaN / GaN超晶格结构减少InGaN / GaN多量子阱发光二极管的效率下降
机译:以极性,半极性和非极性方向生长的InGaN / GaN多量子阱发光二极管。
机译:梯度铟成分p型InGaN层增强GaN基绿色发光二极管的量子效率
机译:在纳米孔GaN层上生长的IngaN / GaN多量子孔发光二极管的增强性能
机译:交错InGaN量子阱发光二极管提高辐射效率。