Fabrication and characterization of Al nanomechanical resonators for coupling to nanoelectronic devices

摘要

We report on a suspension technique for Al dou-bly clamped beams. The technique is based on two con-secutive reactive ion etching processes in CF4 plasma, anisotropic and isotropic, of SiO_x on which Al layer is de-posited. With this technique, Al doubly clamped beams were fabricated. One of the beams was characterized using a mag-netomotive measurement scheme at low temperatures. The developed suspension technique is suitable for the fabrica-tion of Al nanoelectronic devices with a mechanical degree of freedom, in particular, superconducting flux qubits with partly suspended loops.