High-speed multibit operation of a dual vacancy-type oxide device with extended bi-polar resistive switching behaviors

摘要

We investigated the resistive switching behaviors of the metal-copper oxide-metal devices with the enhanced capability in terms of high speed and multi-bit operation. From the analysis of the normal and extended resistive switching behaviors, the voltage-induced resistive changes were modeled and the resistive switching polarity was explained. Also, we proposed and fabricated a dual vacancy-type device structure with an extended resistive switching behavior and demonstrated a high-speed implemental 2-bit multi-bit operation by controlling specifically switch-on voltage pulses.