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机译:ZnGa_2Se_4 / Si纳米异质结二极管的负电容
Nano-Science & Semiconductor Labs., Physics Department,Faculty of Education, Ain Shams University, Roxy, Cairo, Egypt,Semiconductor Labs., Physics Department, Faculty of Education, Ain Shams University, Roxy, Cairo, Egypt,Department of Physics, Faculty of Science,King Khalid University, P.O. Box 9004, Abha, Saudi Arabia;
Nano-Science Labs., Physics Department, Faculty of Education,Ain Shams University, Roxy, Cairo, Egypt;
Nano-Science Labs., Physics Department, Faculty of Education,Ain Shams University, Roxy, Cairo, Egypt,Semiconductor Labs., Physics Department, Faculty of Education, Ain Shams University, Roxy, Cairo, Egypt;
Semiconductor Labs., Physics Department, Faculty of Education, Ain Shams University, Roxy, Cairo, Egypt;
Thin Film Lab., Physics Department, Faculty of Education,Ain Shams University, Roxy, Cairo, Egypt;
Department of Physics, Faculty of Science, Firat University, Elazig, Turkey;
机译:Cr / p-si肖特基势垒二极管(SBD)的正向偏置电容-电压中的负电容和异常峰的来源
机译:瞬态电流响应分析通过发光二极管的空间电荷和负电容效应
机译:基于瞬态电流响应分析的有机发光二极管中的空间电荷和负电容效应
机译:基于瞬态负电容(NC)理论的负电容场效应晶体管(NCFET)中SiO2 / Si接口的界面陷阱的作用
机译:单端半导体二极管混频器:一种数学模型,其中包括电路电阻,二极管电容,直流偏置和电路滤波器的影响
机译:Ti-氧化物-Si二极管中Sb介导的Ge量子点:负差分电容
机译:高正向偏压下半导体二极管的电子跃迁动力学和负电容的频率依赖性
机译:碳化硅(siC)肖特基二极管和siC金属氧化物半导体的脉冲电容测量